MPSA77 Datasheet and Specifications PDF

The MPSA77 is a SILICON PNP DARLINGTON TRANSISTORS.

Key Specifications Powered by Octopart

Max Operating Temp150 °C
Min Operating Temp-65 °C

MPSA77 Datasheet

MPSA77 Datasheet (Central Semiconductor)

Central Semiconductor

MPSA77 Datasheet Preview

The CENTRAL SEMICONDUCTOR MPSA75 series devices are silicon PNP Darlington transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain. MARKING:.

0
*- 500
*- 100 40 40 - 1.5 - 2.0 10K 10K 125 - MPSA76 MIN MAX
* 100
*- 500
* 100 50 50 - 1.5 - 2.0 10K 10K 125 - MPSA77 MIN MAX
*- 100
*- 500 - 100 60 60 - 1.5 - 2.0 10K 10K 125 - UNITS V V V mA mW °C °C/W UNITS nA nA nA nA nA nA nA V V V V MHz R1 (18-March 2014) MPSA75 MPSA76 MPSA77 SI.

MPSA77 Datasheet (onsemi)

onsemi

MPSA77 Datasheet Preview

MPSA75, MPSA77 Darlington Transistors PNP Silicon Features • These are Pb--Free Devices* MAXIMUM RATINGS Rating Collector--Emitter Voltage MPSA75 MPSA77 Symbol VCES Value --40 --60 Unit Vdc Emi.


* These are Pb
*Free Devices* MAXIMUM RATINGS Rating Collector
*Emitter Voltage MPSA75 MPSA77 Symbol VCES Value
*40
*60 Unit Vdc Emitter
*Base Voltage Collector Current
* Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD
*10
*500 625 5.0 Vdc mAdc mW mW/°C O.

MPSA77 Datasheet (Fairchild Semiconductor)

Fairchild Semiconductor

MPSA77 Datasheet Preview

MPSA77 MPSA77 PNP Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 800mA. • Sourced from process 61. 1 TO-92 1. Emitter 2. Base.

IC = -100µA, IB = 0 VCB = -30V, IE = 0 VEB = -10V, IC = 0 IC = -10mA, VCE = -5.0V IC = -100mA, VCE = -5.0V IC = -100mA, IB = -0.1mA IC = -100mA, VCE = -5.0mA IC = -10mA, VCE = -5.0V f = 100MHz 100 10,000 10,000 -1.5 -2.0 V V MHz Min. -60 -100 -100 Max. Units V nA nA Collector-Emitter Breakdown Volta.

MPSA77 Datasheet (KEC)

KEC

MPSA77 Datasheet Preview

SEMICONDUCTOR TECHNICAL DATA DARLINGTON TRANSISTOR B MPSA77 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES ᴌComplementary to MPSA27. A N K D E G MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC Collector-Base .

ᴌComplementary to MPSA27. A N K D E G MAXIMUM RATINGS (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VEBO IC PC Tj Tstg RATING -60 -60 -10 -50.

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