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MPSW01 - NPN General Purpose Amplifier

Key Features

  • This device is designed for general purpose medium power amplifiers.
  • Sourced from process 37 Absolute Maximum Ratings.
  • Ta = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage 30 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 40 5.0 IC Collector Current - Continuous 1.0 PD Total Device Dissipation Derate about 25°C 1.0 8.0 TJ , TSTG Operating Junction and Storage Temperature Range -55 to +150.
  • These ratings are l.

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MPSW01 NPN General Purpose Amplifier MPSW01 NPN General Purpose Amplifier Features • This device is designed for general purpose medium power amplifiers • Sourced from process 37 Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value VCEO Collector-Emitter Voltage 30 VCBO VEBO Collector-Base Voltage Emitter-Base Voltage 40 5.0 IC Collector Current - Continuous 1.0 PD Total Device Dissipation Derate about 25°C 1.0 8.0 TJ , TSTG Operating Junction and Storage Temperature Range -55 to +150 * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Note : 1) These ratings are based on a maximum junction temperature 150 ‘C 2) These are steady state limits.