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P11N50CF - FQP11N50CF

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V.
  • Low Gate Charge (typical 43 nC).
  • Low Crss (typical 20pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • Fast Recovery Body Diode (typical 90ns) TM.

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FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET July 2005 FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features • 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V • Low Gate Charge (typical 43 nC) • Low Crss (typical 20pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • Fast Recovery Body Diode (typical 90ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.