P11N50CF Datasheet | Fairchild Semiconductor

FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET July 2005 FRFET FQP11N50CF/FQPF11N50CF 500V N-Channel MOSFET Features - 11A, 500V, RDS(on) = 0.55Ω @VGS = 10 V - Low Gate Charge (typical 43 nC) - Low Crss (typical 20pF) - Fast Switching - 100% Avalanche Tested - Improved dv/dt Capability - Fast Recovery Body Diode (typical 90ns) Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices...