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P11N50Z - NDP11N50Z

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ON Semiconductor

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P11N50Z NDP11N50Z by ON Semiconductor - Datasheet Preview — Datasheet preview – P11N50Z

Datasheet Details

Part number	P11N50Z
Manufacturer	ON Semiconductor
File Size	125.88 KB
Description	NDP11N50Z
Datasheet	P11N50Z Datasheet
Additional preview pages of the P11N50Z datasheet.

Product details

Features

Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb.
Free and are RoHS Compliant VDSS 500 V Rating Drain.
to.
Source Voltage Continuous Drain Current, RqJC Continuous Drain Current TA = 100°C, RqJC Pulsed Drain Current, VGS @ 10 V Power Dissipation, RqJC (Note 1) Gate.
to.
Source Voltage Single Pulse Avalanche Energy, ID = 10.5 A ESD (HBM) (JESD22.
A114) RMS Isolation Voltage (t = 0.3 sec.

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Published: Apr 22, 2014 |