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P2N80 - FQP2N80

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 2.4 A, 800 V, RDS(on) = 6.3 Ω (Max. ) @ VGS = 10 V, ID = 1.2 A.
  • Low Gate Charge (Typ. 12 nC).
  • Low Crss (Typ. 5.5 pF).
  • 100% Avalanche Tested D GD S G TO-220 S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQP2N80 800 2.4 1.52 9.6 ± 30 (Note 2) (Note 1) (Note.

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Full PDF Text Transcription (Reference)

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FQP2N80 — N-Channel QFET® MOSFET November 2013 FQP2N80 N-Channel QFET® MOSFET 800 V, 2.4 A, 6.3 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 2.4 A, 800 V, RDS(on) = 6.3 Ω (Max.) @ VGS = 10 V, ID = 1.2 A • Low Gate Charge (Typ. 12 nC) • Low Crss (Typ. 5.