P4N60 - SSP4N60

Product Overview

Fairchild Semiconductor

Part number	P4N60
Manufacturer	Fairchild Semiconductor
File Size	290.43 KB
Description	SSP4N60
Datasheet	P4N60 Datasheet
Additional preview pages of the P4N60 datasheet.

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max. ) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ. ) SSP4N60AS BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Dr.

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Published: Mar 12, 2008 |