P4N60
P4N60 is SSP4N60 manufactured by Fairchild Semiconductor.
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 Ω (Typ.)
SSP4N60AS
BVDSS = 600 V RDS(on) = 2.5 Ω ID = 4 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 o C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 o C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds
2 O 1 O 1 O 3 O o
Value 600 4 2.5
1 O
Units V A A V m J A m J V/ns W W/ C o
16 + _ 30 262 4 10 3.0 100 0.8
- 55 to +150 o
Thermal Resistance
Symbol R θJC R θCS R θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.25 -62.5 o
Units C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
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SSP4N60AS
Electrical Characteristics (TC=25o C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units 600 -2.0 -----------------0.68 ------3.32 545 63 25 14 16 49 22 25 4 11.9 --4.0 100 -100 25 250 2.5 -710 75 30 40 45 110 55 34 --n C ns p F µA Ω Ω V V n A
N-CHANNEL POWER MOSFET
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