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P55N06 - FDP55N06

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A.
  • Low Gate Charge ( Typ. 30 nC).
  • Low Crss ( Typ. 60 pF).
  • 100% Avalanche Tested N-Channel UniFETTM MOSFET.

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FDP55N06 / FDPF55N06 — N-Channel UniFETTM MOSFET October 2013 FDP55N06 / FDPF55N06 60 V, 55 A, 22 mΩ Features • RDS(on) = 22 mΩ @VGS = 10 V, ID = 27.5 A • Low Gate Charge ( Typ. 30 nC) • Low Crss ( Typ. 60 pF) • 100% Avalanche Tested N-Channel UniFETTM MOSFET Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.