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P8N60C - FQP8N60C

Download the P8N60C datasheet PDF. This datasheet also covers the P8N60 variant, as both devices belong to the same fqp8n60c family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology.

Key Features

  • 7.5A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current -.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P8N60_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
P8N18 RFP8N18 ETC
P8NA50 STP8NA50 ST Microelectronics
P8NC50FP STP8NC50FP STMicroelectronics
P8NC60FP STP8NC60FP STMicroelectronics
P8NK100Z STP8NK100Z STMicroelectronics

Other Datasheets by Fairchild (now onsemi)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. ® Features • • • • • • 7.5A, 600V, RDS(on) = 1.