PCGA200T65NF8 Datasheet PDF

FEATURES

„ AEC-Q101 Qualified „ Max Junction Temperature 175°C „ Positive Temperature Co-efficient „ Ease of Paralleling „ Short Circuit Rated „ Very Low Saturation Voltage: VCE(SAT) = 1.53V (Typ.) @ IC = 200A „ Optimized for Motor Control

APPLICATIONS

APPLICATIONS

„ Automotive Traction Modules „ General Power Modules May 2016 Ordering Information P/N Packing Die Size Emitter Attach Area Gate pad Attach Area Die thickness Top Metal Back Metal Topside Passivation Wafer diameter Max Possible Die Per Wafer PCGA200T65NF8 Wafer (Sawn-On-Foil) mils μm 394 X 394 10,000 X 10,000 2 x (169 x 340) 2 x (4,300 x 8,640) 55 x 55 1,400 x 1,400 3 78 Al (0.5% Cu, 0.8% Si) Al/VNi/Ag Silicon Nitride Plus Polymide 200mm 234 ©2016 Fairchild Semiconductor Corporation 1 PCGA200T65NF8 Rev. 1.0 PCGA200T65NF8 650V, 200A Field Stop Trench IGBT

ABSOLUTE MAXIMUM RATINGS

(TVJ= 25oC unless otherwise noted) Symbol VCES VGES IC ICM SCWT TVJ Tstg Parameter Collector to Emitter Voltage Gate-to-Emmiter Voltage Collector C...