PCGA200T65NF8M1 Datasheet | onsemi

PCGA200T65NF8M1  650 V, 200 A Field Stop Trench IGBT with Solderable Top Metal Features - AEC- Q101 Qualified - Maximum Junction Temperature 175_C - Positive Temperature Coefficient - Easy Paralleling - Short Circuit Rated - Very Low Saturation Voltage: VCE(SAT) = 1.53 V(Typ.) @ IC = 200 A - Optimized for Motor Control Applications - Emitter Pad Covered with Solderable Metal Layer Applications - Automotive Traction Modules - General Power Modules .onsemi. ORDERING INFORMATION Part Number Packing Die Size Emitter Attach Area Gate / Sensor Pad Attach Area Die Thickness Top Metal Back Metal Topside Passivation Wafer Diameter Max Possible Die Per Wafer Water (sawn on foil) mils mm 394 × 394 10,000 × 10,000 2 × (177 × 348) 2 × (4,493.5 × 8,832) 55 × 55 1,408 × 1,406 5 mm Al Si Cu + 1.15 mm Ti/Ni V/Ag (STM) 0.95 mm Ni V/Ag Silicon Nitride plus Polyimide 200 mm © Semiconductor ponents Industries, LLC,...