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PCGA200T65NF8M1 - IGBT

Key Features

  • AEC.
  • Q101 Qualified.
  • Maximum Junction Temperature 175_C.
  • Positive Temperature Coefficient.
  • Easy Paralleling.
  • Short Circuit Rated.
  • Very Low Saturation Voltage: VCE(SAT) = 1.53 V(Typ. ) @ IC = 200 A.
  • Optimized for Motor Control.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PCGA200T65NF8M1  650 V, 200 A Field Stop Trench IGBT with Solderable Top Metal Features • AEC−Q101 Qualified • Maximum Junction Temperature 175_C • Positive Temperature Coefficient • Easy Paralleling • Short Circuit Rated • Very Low Saturation Voltage: VCE(SAT) = 1.53 V(Typ.) @ IC = 200 A • Optimized for Motor Control Applications • Emitter Pad Covered with Solderable Metal Layer Applications • Automotive Traction Modules • General Power Modules www.onsemi.com ORDERING INFORMATION Part Number Packing Die Size Emitter Attach Area Gate / Sensor Pad Attach Area Die Thickness Top Metal Back Metal Topside Passivation Wafer Diameter Max Possible Die Per Wafer PCGA200T65NF8M1 Water (sawn on foil) mils mm 394 × 394 10,000 × 10,000 2 × (177 × 348) 2 × (4,493.