PV218N50 Overview
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 550V @TJ = 150°C
- Typ. RDS(on) = 0.265Ω @VGS = 10 V
- Low gate charge (typical 42 nC)
- Low Crss (typical 11 pF)
- Fast switching
