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PV218N50 - 500V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 550V @TJ = 150°C.
  • Typ. RDS(on) = 0.265Ω @VGS = 10 V.
  • Low gate charge (typical 42 nC).
  • Low Crss (typical 11 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.

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Datasheet preview – PV218N50

Datasheet Details

Part number PV218N50
Manufacturer Fairchild Semiconductor
File Size 1.18 MB
Description 500V N-Channel MOSFET
Datasheet download datasheet PV218N50 Datasheet
Additional preview pages of the PV218N50 datasheet.

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Other Datasheets by Fairchild Semiconductor

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    FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET QFET® FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET Features • 550V @TJ = 150°C • Typ. RDS(on) = 0.265Ω @VGS = 10 V • Low gate charge (typical 42 nC) • Low Crss (typical 11 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
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