Datasheet Summary
FQP18N50V2/FQPF18N50V2 500V N-Channel MOSFET
QFET®
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
Features
- 550V @TJ = 150°C
- Typ. RDS(on) = 0.265Ω @VGS = 10 V
- Low gate charge (typical 42 nC)
- Low Crss (typical 11 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient...