QSE114 Datasheet | Fairchild Semiconductor

DESCRIPTION The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package. FEATURES - - - - - - - NPN silicon phototransistor Package type: Sidelooker Medium wide reception angle, 50° Package material and color: black epoxy Matched emitter: QEE113 Daylight filter High sensitivity © 2002 Fairchild Semiconductor Corporation Page 1 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit °C °C °C °C V V m W Soldering Temperature (Flow)(2,3) Collector Emitter Voltage Emitter Collector Voltage Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 1.33 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. λ = 880 nm (Al Ga As). ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C unless otherwise specified) Parameter Peak Sensitivity Reception Angle Collector Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector QSE113 Current(5) VCE = 10 V, Ee = 0 IC = 1 m A IE = 100 µA Ee = 0.5 m W/cm2, VCE = 5 V Ee = 0.5 m W/cm2, VCE = 5 V Ee = 0.5 m W/cm2, IC = 0.1 m A IC = 1m A, VCC = 5V, RL = 100Ω Test Conditions Symbol λPS Θ ICEO BVCEO BVECO IC(ON) IC(ON) VCE(SAT) tr tf Min - - - 30 5 0.25 1.00 - - - Typ 880 ±25 - - - - - - 8 8 Max - - 100 - - 1.50 - 0.4 - - Units n M Deg. n A V V m A m A V µs µs On-State Collector Current(5) QSE114 Saturation Voltage(5) Rise Time Fall Time © 2002 Fairchild Semiconductor Corporation Page 2 of 4 5/1/02 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSE113 Figure 1. Light Current vs. Radiant Intensity 101 VCE = 5V Ga As Light Source Figure 2. Angular...