QSE114
QSE114 is Plastic Silicon Infrared Phototransistor manufactured by onsemi.
- Part of the QSE113 comparator family.
- Part of the QSE113 comparator family.
Description
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
Features
- NPN Silicon Phototransistor
- Package Type: Sidelooker
- Medium Wide Reception Angle, 50°
- Package Material and Color: Black Epoxy
- Matched Emitter: QEE113
- Daylight Filter
- High Sensitivity
- Blue Dot Marking on the Top Side
- This is a Pb- Free Device
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
TOPR TSTG TSOL- I
Operating Temperature
Storage Temperature
Soldering Temperature (Iron) (Note 2), (Note 3), (Note 4)
- 40 to +100
°C
- 40 to +100
°C
240 for 5 s
°C
TSOL- F Soldering Temperature (Flow) (Note 2), (Note 3)
260 for 10 s
°C
VCE Collector- Emitter Voltage
VEC Emitter- Collector Voltage
Power Dissipation (Note 1)
100 m W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Derate power dissipation linearly 1.33 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron 1/16” (1.6 mm) minimum from housing.
DATA SHEET .onsemi.
SCHEMATIC...
