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RF1K49088 - 3.5A/ 30V/ Avalanche Rated/ Logic Level/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET

Datasheet Summary

Description

The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 3.5A, 30V.
  • rDS(ON) = 0.060Ω.
  • Temperature Compensating PSPICE Model.
  • On-Resistance vs Gate Drive Voltage Curves.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve Ordering Information PART NUMBER RF1K49088.

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Datasheet preview – RF1K49088

Datasheet Details

Part number RF1K49088
Manufacturer Fairchild Semiconductor
File Size 153.60 KB
Description 3.5A/ 30V/ Avalanche Rated/ Logic Level/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
Datasheet download datasheet RF1K49088 Datasheet
Additional preview pages of the RF1K49088 datasheet.

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Full PDF Text Transcription

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S E M I C O N D U C T O R RF1K49088 Description The RF1K49088 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49088. BRAND RF1K49088 January 1997 3.
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