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RF1K49086 - 3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET

Datasheet Summary

Description

The RF1K49086 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 3.5A, 30V.
  • rDS(ON) = 0.060Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve Ordering Information PART NUMBER RF1K49086.

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Datasheet Details

Part number RF1K49086
Manufacturer Fairchild Semiconductor
File Size 195.97 KB
Description 3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
Datasheet download datasheet RF1K49086 Datasheet
Additional preview pages of the RF1K49086 datasheet.

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Power MOSFET Data Sheets S E M I C O N D U C T O R RF1K49086 3.5A, 30V, Avalanche Rated, Dual N-Channel LittleFET™ Enhancement Mode Power MOSFET Description The RF1K49086 Dual N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from integrated circuits. Formerly developmental type TA49086. January 1997 Features • 3.5A, 30V • rDS(ON) = 0.
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