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RF1K49156 - 6.3A/ 30V/ 0.030 Ohm/ Logic Level/ Single N-Channel LittleFET Power MOSFET

Key Features

  • 6.3A, 30V.
  • rDS(ON) = 0.030Ω.
  • Temperature Compensating PSPICE® Model.
  • On-Resistance vs Gate Drive Voltage Curves.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol BRAND RF1K49156 SOURCE (2) DRAIN (7) NC (1) DRAIN (8) Ordering Information PART NUMBER RF1K49156.

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📁 Similar Datasheet

Part Number Description Manufacturer
RF1K49156 6.3A/ 30V/ 0.030 Ohm/ Logic Level/ Single N-Channel LittleFET Power MOSFET Intersil Corporation
RF1K49154 2A/ 60V/ 0.130 Ohm/ Dual N-Channel/ LittleFET Power MOSFET Intersil Corporation
RF1K49157 6.3A/ 30V/ 0.030 Ohm/ Single N-Channel LittleFET Power MOSFET Intersil Corporation
RF1K49086 3.5A/ 30V/ 0.06 Ohm/ Dual N-Channel LittleFET Power MOSFET Intersil Corporation
RF1K49088 3.5A/ 30V/ 0.06 Ohm/ Logic Level/ Dual N-Channel LittleFET Power MOSFET Intersil Corporation

Other Datasheets by Fairchild (now onsemi)

Part Number Description
RF1K49154 2A/ 60V/ 0.130 Ohm/ Dual N-Channel/ LittleFET Power MOSFET
RF1K49157 6.3A/ 30V/ Avalanche Rated/ Single N-Channel LittleFET Enhancement Mode Power MOSFET
RF1K49086 3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
RF1K49088 3.5A/ 30V/ Avalanche Rated/ Logic Level/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
RF1K49090 3.5A/ 12V/ 0.050 Ohm/ Logic Level/ Dual N-Channel LittleFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF1K49156 Data Sheet January 2002 6.3A, 30V, 0.030 Ohm, Logic Level, Single N-Channel LittleFET™ Power MOSFET This Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA49156. Features • 6.3A, 30V • rDS(ON) = 0.