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RF1K49157 - 6.3A/ 30V/ Avalanche Rated/ Single N-Channel LittleFET Enhancement Mode Power MOSFET

Datasheet Summary

Description

The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 6.3A, 30V.
  • rDS(ON) = 0.030Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve Ordering Information PART NUMBER RF1K49157.

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Datasheet preview – RF1K49157

Datasheet Details

Part number RF1K49157
Manufacturer Fairchild Semiconductor
File Size 208.33 KB
Description 6.3A/ 30V/ Avalanche Rated/ Single N-Channel LittleFET Enhancement Mode Power MOSFET
Datasheet download datasheet RF1K49157 Datasheet
Additional preview pages of the RF1K49157 datasheet.

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Full PDF Text Transcription

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S E M I C O N D U C T O R RF1K49157 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET™ Enhancement Mode Power MOSFET Description The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from integrated circuits. Formerly developmental type TA49157. January 1997 Features • 6.3A, 30V • rDS(ON) = 0.
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