RF1K49157
Description
The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.
Key Features
- rDS(ON) = 0.030Ω
- Temperature pensating PSPICE Model
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
