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RF1K49157 - 6.3A/ 30V/ Avalanche Rated/ Single N-Channel LittleFET Enhancement Mode Power MOSFET

General Description

The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.

Key Features

  • 6.3A, 30V.
  • rDS(ON) = 0.030Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve Ordering Information PART NUMBER RF1K49157.

📥 Download Datasheet

Datasheet Details

Part number RF1K49157
Manufacturer Fairchild (now onsemi)
File Size 208.33 KB
Description 6.3A/ 30V/ Avalanche Rated/ Single N-Channel LittleFET Enhancement Mode Power MOSFET
Datasheet download datasheet RF1K49157 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF1K49157 6.3A/ 30V/ 0.030 Ohm/ Single N-Channel LittleFET Power MOSFET Intersil Corporation
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RF1K49156 6.3A/ 30V/ 0.030 Ohm/ Logic Level/ Single N-Channel LittleFET Power MOSFET Intersil Corporation
RF1K49086 3.5A/ 30V/ 0.06 Ohm/ Dual N-Channel LittleFET Power MOSFET Intersil Corporation
RF1K49088 3.5A/ 30V/ 0.06 Ohm/ Logic Level/ Dual N-Channel LittleFET Power MOSFET Intersil Corporation

Other Datasheets by Fairchild (now onsemi)

Part Number Description
RF1K49154 2A/ 60V/ 0.130 Ohm/ Dual N-Channel/ LittleFET Power MOSFET
RF1K49156 6.3A/ 30V/ 0.030 Ohm/ Logic Level/ Single N-Channel LittleFET Power MOSFET
RF1K49086 3.5A/ 30V/ Avalanche Rated/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
RF1K49088 3.5A/ 30V/ Avalanche Rated/ Logic Level/ Dual N-Channel LittleFET Enhancement Mode Power MOSFET
RF1K49090 3.5A/ 12V/ 0.050 Ohm/ Logic Level/ Dual N-Channel LittleFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S E M I C O N D U C T O R RF1K49157 6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET™ Enhancement Mode Power MOSFET Description The RF1K49157 Single N-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This device can be operated directly from integrated circuits. Formerly developmental type TA49157. January 1997 Features • 6.3A, 30V • rDS(ON) = 0.