Fairchild Semiconductor RF1S45N06
The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.| Part No. | RF1S45N06 |
|---|---|
| Datasheet | RF1S45N06 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| Buy | Stock & Price |
FEATURES
● 45A, 60V● rDS(ON) = 0.028Ω
● Temperature Compensating PSPICE Model
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● +175oC Operating Temperature
DESCRIPTION
They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFG45N06 RFP45N06 RF1S45N06 RF1S45N06SM JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) PACKAGE TO-247 TO-220AB TO-262AA TO-263AB BRAND RFG45N06 RFP45N06 F1S45N06 F1S45N06 DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE NOTE: When ordering, use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06SM9A. Formerly developmental type TA49028. JEDEC TO-263AB M A Symbol G D A A DRAIN (FLANGE) GATE SOURCE SABSOLUTE MAXIMUM RATINGS
TC = +25oC RFG45N06, RFP45N06 RF1S45N06, RF1S45N06SM 60 60 ±20 45 Refer to Peak Current Curve Refer to UIS Curve 125 131 0.877 -55 to +175 UNITS V V V A Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . .
