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RF1S45N06SM - 45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs

General Description

The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

Key Features

  • 45A, 60V.
  • rDS(ON) = 0.028Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature.

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📁 Similar Datasheet

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
RF1S45N06 45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
RF1S40N10 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
RF1S40N10SM 40A/ 100V/ 0.040 Ohm/ N-Channel Power MOSFETs
RF1S22N10SM 22A/ 100V/ 0.080 Ohm/ N-Channel Power MOSFETs
RF1S25N06 25A/ 60V/ 0.047 Ohm/ N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S E M I C O N D U C T O R RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (BOTTOM SIDE METAL) December 1995 Features • 45A, 60V • rDS(ON) = 0.028Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature Description The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.