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RF1S60P03 - 60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs

Description

The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

Features

  • 60A, 30V.
  • rDS(ON) = 0.027Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL).

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Datasheet Details

Part number RF1S60P03
Manufacturer Fairchild (onsemi)
File Size 104.12 KB
Description 60A/ 30V/ Avalanche Rated/ P-Channel Enhancement-Mode Power MOSFETs
Datasheet download datasheet RF1S60P03 Datasheet

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Full PDF Text Transcription

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S E M I C O N D U C T O R RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.
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