Fairchild Semiconductor RFD16N05SM
The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.| Part No. | RFD16N05SM |
|---|---|
| Datasheet | RFD16N05SM Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● 16A, 50V● rDS(ON) = 0.047Ω
● Temperature Compensating PSPICE® Model
● Peak Current vs Pulse Width Curve
● UIS Rating Curve
● 175oC Operating Temperature
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-252AA DRAIN (FLANGE) GATE SOURCE ©2003 Fairchild Semiconductor Corporation RFD16N05SM Rev. C0 RFD16N05SM
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified RFD16N05SM9A UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 50 V Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 50 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 16 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Refer to Peak Current Curve Gate to...
