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RFG50N06 - N-Channel Power MOSFET

Key Features

  • 50A, 60V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compe.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49018. Ordering Information PART NUMBER PACKAGE BRAND RFG50N06 TO-247 RFG50N06 RFP50N06 TO-220AB RFP50N06 RF1S50N06SM TO-263AB F1S50N06 NOTE: When ordering, use the entire part number.