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RFG50N06 Datasheet Avalanche Rated N-channel Enhancement-mode Power MOSFETs

Manufacturer: Harris

Overview: SEMICONDUCTOR RFG50N06, RFP50N06, RF1S50N06, RF1S50N06SM December 1995 50A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power.

Datasheet Details

Part number RFG50N06
Manufacturer Harris
File Size 77.46 KB
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Datasheet RFG50N06-Harris.pdf

General Description

Packages DRAIN (BOTTOM SIDE METAL) JEDEC STYLE TO-247 SOURCE DRAIN GATE The RFG50N06, RFP50N06, RF1S50N06, and RF1S50N06SM N-Channel power MOSFETs are manufactured using the MegaFET process.

This process, which uses

Key Features

  • 50A, 60V.
  • rDS(ON) = 0.022Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature.

RFG50N06 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Fairchild Semiconductor Logo RFG50N06 N-Channel Power MOSFET Fairchild Semiconductor
Intersil Corporation Logo RFG50N06 N-Channel Power MOSFET Intersil Corporation
Intersil Corporation Logo RFG50N06LE N-Channel Power MOSFET Intersil Corporation

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RFG50N06 Distributor