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RFP15N05L - N-Channel Power MOSFET

Key Features

  • 15A, 50V.
  • rDS(ON) = 0.140Ω.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven from QMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet January 2004 RFP15N05L 15A, 50V, 0.140 Ohm, Logic Level NChannel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA0522. Ordering Information PART NUMBER RFP15N05L PACKAGE TO-220AB BRAND RFP15N05L NOTE: When ordering, use the entire part number. Features • 15A, 50V • rDS(ON) = 0.