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RFP15N06L - N-Channel Power MOSFET

General Description

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Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

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Key Features

  • 15A, 50V and 60V.
  • rDS(ON) = 0.140Ω.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven from QMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics Ordering Information PART NUMBER RFP15N05L RFP15N06L NOTE:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RFP15N05L, RFP15N06L Data Sheet July 1999 File Number 1558.3 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA0522. Features • 15A, 50V and 60V • rDS(ON) = 0.