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RFP60P03 - P-Channel MOSFET

General Description

The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

Key Features

  • 60A, 30V.
  • rDS(ON) = 0.027Ω.
  • Temperature Compensating PSPICE Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL).

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Full PDF Text Transcription for RFP60P03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RFP60P03. For precise diagrams, and layout, please refer to the original PDF.

S E M I C O N D U C T O R RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURC...

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annel Enhancement-Mode Power MOSFETs Packages JEDEC STYLE TO-247 SOURCE DRAIN GATE December 1995 Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • +175oC Operating Temperature DRAIN (BOTTOM SIDE METAL) Description The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.

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