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RFP60P03 - P-Channel Power MOSFET

Datasheet Summary

Features

  • 60A, 30V.
  • rDS(ON) = 0.027Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER RFG60P03 RFP60P03 RF1S60P03SM.

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Datasheet Details

Part number RFP60P03
Manufacturer Intersil Corporation
File Size 88.95 KB
Description P-Channel Power MOSFET
Datasheet download datasheet RFP60P03 Datasheet
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RFG60P03, RFP60P03, RF1S60P03SM Data Sheet July 1999 File Number 3951.3 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49045. Features • 60A, 30V • rDS(ON) = 0.
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