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RMPA2265 - Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz

Description

The RMPA2265 power amplifier module (PAM) is designed for WCDMA applications in both the 1850 1910 and 1920

1980 MHz bands.

Features

  • a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild’s InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. Features.
  • Single positive-supply operation and low power and shutdown modes.
  • 42% WCDMA efficiency at +28 dBm average output power 1920.
  • 1980 MHz.
  • 39% WCDMA efficiency at 27.5 dBm average output power 1850.
  • 1910 MHz.

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Datasheet Details

Part number RMPA2265
Manufacturer Fairchild (onsemi)
File Size 484.13 KB
Description Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz
Datasheet download datasheet RMPA2265 Datasheet

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Full PDF Text Transcription

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RMPA2265 December 2004 RMPA2265 Dual Band WCDMA Power Amplifier Module 1850 to 1910 MHz and 1920 to 1980 MHz General Description The RMPA2265 power amplifier module (PAM) is designed for WCDMA applications in both the 1850–1910 and 1920– 1980 MHz bands. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild’s InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process. Features • Single positive-supply operation and low power and shutdown modes • 42% WCDMA efficiency at +28 dBm average output power 1920–1980 MHz • 39% WCDMA efficiency at 27.
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