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RMWL26001 - 23/26 GHZ Lna

General Description

The RMWL26001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Low Noise Amplifier for use in point to point and point to multi-point radios, and various communications applications.

Key Features

  • 4 mil substrate.
  • Small-signal gain 21dB (typ. ).
  • 2.9dB noise figure (typ. ).
  • Chip size 3.0mm x 1.25mm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC Tstg Rjc Parameter Positive DC voltage (+4V Typical) Negative DC voltage Simultaneous (Vd.
  • Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) Ratings +6 -2 8 100 +8 -30 to +85 -55 to +125 170 Units.

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RMWL26001 www.DataSheet4U.com June 2004 RMWL26001 21–26.5 GHz Low Noise Amplifier MMIC General Description The RMWL26001 is a 4-stage GaAs MMIC amplifier designed as a 21...

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iption The RMWL26001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Low Noise Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild RF Components amplifiers, multipliers and mixers it forms part of a complete 26 GHz transmit/receive chipset. The RMWL26001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of low noise amplifier applications. Features • 4 mil substrate • Small-signal gain 21dB (typ.) • 2.9dB noise figure (typ.) • Chip size 3.0mm x 1.