Fairchild Semiconductor S9018
NPN Epitaxial Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings 30 15 5 50 400 150 -55 ~ 150 Units V V V mA mW °C °CELECTRICAL CHARACTERISTICS
Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE VCE (sat) Cob Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Output Capacitance IC =100µA, IE =0 IC =1.0mA, IB =0 IE =100µA, IC =0 VCB =12V, IE =0 VCE =5V, IC =1.0mA IC =10mA, IB =1mA VCB =10V, IE =0 f=1MHz