SFP9Z14 - Advanced Power MOSFET

Fairchild (now onsemi)

Datasheet Details

Advanced Power MOSFET.

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current : -10 µA (Max. ) @ VDS = -60V n Low RDS(ON) : 0.362 Ω (Typ. ) SFP9Z14 BVDSS = -60 V RDS(on) = 0.5 Ω ID = -6.7 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=.