SFP9Z24
SFP9Z24 is Advanced Power MOSFET manufactured by Fairchild Semiconductor.
FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current : -10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.206 Ω (Typ.)
BVDSS = -60 V RDS(on) = 0.28 Ω ID = -9.7 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o o o
Value -60 -9.7 -6.8
1 O
Units V A A V m J A m J V/ns W W/ C o
-40 ±30 161 -9.7 4.9 -5.5 49 0.33
- 55 to +175
O 1 O 1 O 3 O
2 o
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 3.06 -62.5 o
Units
C/W
Rev. C
Electrical Characteristics (TC=25o C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units -60 --2.0 ------------------0.04 ------4.1 465 140 40 11 21 29 20 15 2.9 6.0 ---4.0 -100 100 -10 -100 0.28 -600 215 60 30 50 65 50 19 --n C ns p F µA Ω S V o
P-CHANNEL POWER...
