Datasheet Summary
Advanced Power MOSFET
Features
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Low RDS(ON) : 3.5 Ω (Typ.)
1 2 3
BVDSS = -250 V RDS(on) = 4.0 Ω ID = -1.27 A
TO-220F
1.Gate 2. Drain 3....