Datasheet Summary
Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 0.581 Ω (Typ.)
1 2 3
BVDSS = -200 V RDS(on) = 0.8 Ω ID = -4.4 A
TO-220F
1.Gate 2. Drain 3....