SFS9640 Datasheet | Fairchild Semiconductor

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 0.344 Ω (Typ.) 1 2 3 BVDSS = -200 V RDS(on) = 0.5 Ω ID = -6.2 A TO-220F 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 ” from case for 5-seconds o o o Value -200 -6.2 -4.7 1 O Units V A A V m J A m J V/ns W W/ C o -25 + _ 30 256 -6.2 4.0 -5.0 40 0.32 - 55 to +150 O 1 O 1 O 3 O 2 o Thermal Resistance Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 3.13 62.5 Units o C/W Rev. B ©1999 Fairchild Semiconductor Corporation Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “ Miller ” ) Charge Min. Typ. Max. Units -200 --2.0 ------------------0.16 ------5.8 207 81 16 23 54 19 46 9.2 22.9 ---4.0 -100 100 -10 -100 0.5 -310 120 40 55 115 50 59 --n C ns µA Ω Ω p F V V n A P-CHANNEL POWER MOSFET Electrical Characteristics (TC=25o C unless otherwise specified) Test Condition...