SFS9Z14
SFS9Z14 is Advanced Power MOSFET manufactured by Fairchild Semiconductor.
FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge o n 175 C Operating Temperature n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.362 Ω (Typ.)
BVDSS = -60 V RDS(on) = 0.5 Ω ID = -5.3 A
TO-220F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o o o
Value -60 -5.3 -3.8
1 O 2 O 1 O 1 O 3 O
Units V A A V m J A m J V/ns W W/ C o
-21 ±30 120 -5.3 2.4 -5.5 24 0.16
- 55 to +175 o
Thermal Resistance
Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 6.25 62.5 Units o
C/W
Rev. C
Electrical Characteristics (TC=25o C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units -60 --2.0 ------------------0.05 ------2.2 270 90 25 10 19 21 16 9 1.8 4.2 ---4.0 -100 100 -10 -100 0.5 -350 135 35 30 50 50 40 11 --n C ns p F µA Ω S V o
P-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=-250µ...
