SFS9Z34
SFS9Z34 is Advanced Power MOSFET manufactured by Fairchild Semiconductor.
FEATURES
ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge o ν 175 C Operating Temperature ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Low RDS(ON) : 0.106 Ω (Typ.)
BVDSS = -60 V RDS(on) = 0.14 Ω ID = -12 A
TO-220F
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o o o
Value -60 -12 -8.4
1 O
Units V A A V m J A m J V/ns W W/ C o
-48 ±30 555 -12 3.6 -5.5 36 0.24
- 55 to +175
O 1 O 1 O 3 O
2 o
Thermal Resistance
Symbol RθJC RθJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 4.17 62.5 Units o
C/W
Rev. D
Electrical Characteristics (TC=25o C unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Min. Typ. Max. Units -60 --2.0 ------------------0.05 ------7.9 265 84 14 24 43 28 30 5.3 12 ---4.0 -100 100 -10 -100 0.14 -400 125 40 60 95 65 38 --n C ns µA Ω S p F V o
P-CHANNEL POWER MOSFET
Test Condition VGS=0V,ID=-250µA See...
