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SFU9230B - 200V P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Features

  • -5.4A, -200V, RDS(on) = 0.8Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability S D G! !.
  • ▶ ▲ G S D-PAK SFR Series I-PAK G D S SFU Series.
  • ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous.

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Datasheet Details

Part number SFU9230B
Manufacturer Fairchild Semiconductor
File Size 628.92 KB
Description 200V P-Channel MOSFET
Datasheet download datasheet SFU9230B Datasheet
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Full PDF Text Transcription

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SFR9230B / SFU9230B SFR9230B / SFU9230B 200V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters. Features • • • • • • -5.4A, -200V, RDS(on) = 0.
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