SFWI9510 Overview
Key Features
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area n 175 C Operating Temperature
- Lower Leakage Current : 10 µA (Max.) @ VDS = -100V
- Low RDS(ON) : 0.912 Ω (Typ.) 1 SFW/I9510 BVDSS = -100 V RDS(on) = 1.2 Ω ID = -3.6 A D2-PAK 2 o I2-PAK 1 3 2 3
