SFWI9Z14 Overview
Key Features
- Rugged Gate Oxide Technology
- Lower Input Capacitance
- Improved Gate Charge
- Extended Safe Operating Area n 175 C Operating Temperature
- Lower Leakage Current : 10 µA (Max.) @ VDS = -60V
- Low RDS(ON) : 0.362 Ω (Typ.) 1 SFW/I9Z14 BVDSS = -60 V RDS(on) = 0.5 Ω ID = -6.7 A D2-PAK 2 o I2-PAK 1 3 2 3
