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SGH10N60RUFD - 10A Short Circuit Rated IGBT

General Description

Fairchild's RUFD series of insulated gate bipolar transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.

Key Features

  • Short Circuit Rated 10 us @ TC = 100°C, VGE = 15 V.
  • High Speed Switching.
  • Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 10 A.
  • High Input Impedance.
  • CO-PAK, IGBT with FRD : trr = 42 ns (typ. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGH10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT SGH10N60RUFD 600V, 10 A Short Circuit Rated IGBT December 2013 Features • Short Circuit Rated 10 us @ TC = 100°C, VGE = 15 V • High Speed Switching • Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 10 A • High Input Impedance • CO-PAK, IGBT with FRD : trr = 42 ns (typ.) Applications AC & DC Motors Controls, General Purpose Inverters, and Robotics, and Servo Controls Description Fairchild's RUFD series of insulated gate bipolar transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.