SGH10N60RUFD Datasheet | Fairchild Semiconductor

Features - Short Circuit Rated 10 us @ TC = 100°C, VGE = 15 V - High Speed Switching - Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 10 A - High Input Impedance - CO-PAK, IGBT with FRD : trr = 42 ns (typ.) Applications AC & DC Motors Controls, General Purpose Inverters, and Robotics, and Servo Controls Description Fairchild's RUFD series of insulated gate bipolar transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature . TO-3PN Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VCES VGES ICM (1) IF IFM TSC PD TJ Tstg Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 100°C Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 100°C @ TC = 25°C @ TC = 100°C Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Ratings 600 ± 20 16 10 30 12 92 10 75...