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SGH13N60UFD - IGBT

Key Features

  • TO-3P.
  • High Speed Switching.
  • Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A).
  • High Input Impedance.
  • CO-PAK, IGBT with FRD : Trr = 37nS (typ. ).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGH13N60UFD N-CHANNEL IGBT FEATURES TO-3P * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 37nS (typ.) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast ABSOLUTE MAXIMUM RATINGS C G E Symbol Characteristics Rating Units VCES Collector-Emitter Voltage 600 VGES Gate-Emitter Voltage ±20 IC Collector Current @ Tc = 25°C 13 Collector Current @ Tc = 100°C 6.