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SGH30N60RUFD - IGBT

General Description

Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness.

Key Features

  • Short circuit rated 10us @ TC = 100°C, VGE = 15V.
  • High speed switching.
  • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A.
  • High input impedance.
  • CO-PAK, IGBT with FRD : trr = 50ns (typ. ).

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Full PDF Text Transcription for SGH30N60RUFD (Reference)

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SGH30N60RUFD SGH30N60RUFD Short Circuit Rated IGBT IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction a...

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of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. Features • Short circuit rated 10us @ TC = 100°C, VGE = 15V • High speed switching • Low saturation voltage : VCE(sat) = 2.2 V @ IC = 30A • High input impedance • CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls.

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