Datasheet4U Logo Datasheet4U.com

SS2N60B - SSS2N60B

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology.

Features

  • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Con.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SS2 SCHOTTKY BARRIER RECTIFIER Rectron
SS20 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Rectron Semiconductor
SS20-120 (SS20-xxx) AC Line Surge Suppressor MAG Tech
SS20-277 (SS20-xxx) AC Line Surge Suppressor MAG Tech
SS20-480 (SS20-xxx) AC Line Surge Suppressor MAG Tech

Other Datasheets by Fairchild (onsemi)

Part Number Description
SS22 Schottky Rectifier
SS22FA Surface Mount Schottky Barrier Rectifiers
SS23 Schottky Rectifier
SS23FA Surface Mount Schottky Barrier Rectifiers
SS24 Schottky Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSP2N60B/SSS2N60B SSP2N60B/SSS2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • • • • • • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.
Published: |