Datasheet4U Logo Datasheet4U.com

SS2N60B Datasheet Sss2n60b

Manufacturer: Fairchild (now onsemi)

Overview: SSP2N60B/SSS2N60B SSP2N60B/SSS2N60B 600V N-Channel MOSFET General.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, ..

planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

Key Features

  • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability Typical Characteristics D G G DS TO-220 SSP Series GD S TO-220F SSS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Con.

SS2N60B Distributor