SSH22N50A - Advanced Power MOSFET

Product Overview

Fairchild Semiconductor

Part number	SSH22N50A
Manufacturer	Fairchild Semiconductor
File Size	230.29 KB
Description	Advanced Power MOSFET
Datasheet	SSH22N50A Datasheet
Additional preview pages of the SSH22N50A datasheet.

Avalanche Rugged Technology.
Rugged Gate Oxide Technology.
Lower Input Capacitance.
Improved Gate Charge.
Extended Safe Operating Area.
Lower Leakage Current: 10µA (Max. ) @ VDS = 500V.
Lower RDS(ON): 0.197Ω (Typ. ) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (.

📁 Similar Datasheet

SSH20N50 - (SSH20N45) N-Channel Power MOSFETs (Samsung Electronics)
SSH210 - Surface Mount Schottky Barrier Rectifier (Taiwan Semiconductor)
SSH25N35 - (SSH25N35 / SSH25N40) N-Channel Power MOSFET (Samsung Electronics)
SSH25N40 - (SSH25N35 / SSH25N40) N-Channel Power MOSFET (Samsung Electronics)
SSH10N60A - advanced power MOSFET (Fairchild)
SSH10N60B - 600V N-Channel MOSFET (Fairchild)
SSH10N70 - N-Channel Power MOSFET (Samsung)
SSH10N80 - (SSH10N70 / SSH10N80) N-Channel Power MOSFETs (Samsung)

Other Datasheets by Fairchild Semiconductor

Published: Jan 13, 2016 |