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SSI2N60B Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: .. SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Key Features

  • 2.0A, 600V, RDS(on) = 5.0Ω @VGS = 10 V Low gate charge ( typical 12.5 nC) Low Crss ( typical 7.6 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D !.
  • ◀ ▲.
  • G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Conti.

More Datasheets from Fairchild (now onsemi)

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SSI10N60B 600V N-Channel MOSFET
SSI1N50B 520V N-Channel MOSFET
SSI1N60A Advanced Power MOSFET
SSI1N60B 600V N-Channel MOSFET
SSI4N60B 600V N-Channel MOSFET

SSI2N60B Distributor