SSI4N60B Datasheet 600V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: www.DataSheet4U.com SSW4N60B / SSI4N60B November 2001 SSW4N60B / SSI4N60B 600V N-Channel.

SSI4N60B 600v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	SSI4N60B
Manufacturer	Fairchild (now onsemi)
File Size	668.85 KB
Description	600V N-Channel MOSFET
Download	SSI4N60B Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Key Features

4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100.

More Datasheets from Fairchild (now onsemi)

Part Number	Description
SSI10N60B	600V N-Channel MOSFET
SSI1N50B	520V N-Channel MOSFET
SSI1N60A	Advanced Power MOSFET
SSI1N60B	600V N-Channel MOSFET
SSI2N60B	N-Channel MOSFET
SSI2N80A	Advanced Power MOSFET