Datasheet4U Logo Datasheet4U.com

SSP3N90A - Advanced Power MOSFET

Key Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ. ) 1 2 3 SSP3N90A BVDSS = 900 V RDS(on) = 6.2 Ω ID = 3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM www. DataSheet4U. com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate.

📥 Download Datasheet

Other Datasheets by Fairchild (now onsemi)

Part Number Description
SSP3N80A Advanced Power MOSFET
SSP10N60A Advanced Power MOSFET
SSP10N60B 600V N-Channel MOSFET
SSP1N60B N-Channel MOSFET
SSP2N60A Advanced Power MOSFET
SSP2N60B 600V N-Channel MOSFET
SSP2N90A Advanced Power MOSFET
SSP45N20A advanced power MOSFET
SSP45N20B 200V N-Channel MOSFET
SSP4N60AS Advanced Power MOFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 4.679 Ω (Typ.) 1 2 3 SSP3N90A BVDSS = 900 V RDS(on) = 6.2 Ω ID = 3 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM www.DataSheet4U.com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.