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SSW4N60B Datasheet 600v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: SSW4N60B / SSI4N60B November 2001 SSW4N60B / SSI4N60B 600V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switch mode power supplies.

Key Features

  • 4.0A, 600V, RDS(on) = 2.5Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ! # " ! ! G S D2-PAK SSW Series G D S I2-PAK SSI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100.

More Datasheets from Fairchild (now onsemi)

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SSW1N60B 600V N-Channel MOSFET
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SSW2N80A Advanced Power MOSFET
SSW7N60B 600V N-Channel MOSFET

SSW4N60B Distributor