BC212L Datasheet | Fairchild Semiconductor

TO-92 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300m A. Sourced from Process 68. Absolute Maximum Ratings- Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Value 50 60 5 300 -55 to +150 Units V V V m A °C Operating and Storage Junction Temperature Range - These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA Total Device Dissipation Derate above 25°C TA = 25°C unless otherwise noted Characteristic Max 625 5.0 83.3 200 Units m W m W/°C °C/W °C/W Rev. A 7/24/00 Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient © 2000 Fairchild Semiconductor International PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 2 m A IC = 10 µA IE = 10 µA VCB = 30V VEB = 4V 50 60 5 15 15 V V V n A n A ON CHARACTERISTICS- h FE DC Current Gain IC = 10 u A, VCE = 5 V IC = 2 m A, VCE = 5 V VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage IC = 100 m A, IB = 5 m A IC = 100 m A, IB = 5 m A IC = 2 m A, VCE = 5 V 0.6 40 60 300 0.6 1.1 0.72 V V V SMALL SIGNAL CHARACTERISTICS Cob hfe NF f T Output Capacitance Small Signal Current Gain Noise Figure Current Gain-Bandwidth...